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650 v, 30 a trench field stop igbt s with fast recovery diode kgf65a3h, mgf65a3h, FGF65A3H xgf65a3h- ds rev. 1. 2 sanken electric co.,ltd. 1 jun. 03, 2 01 6 features low saturation voltage high speed switching with integrated fast recovery diode rohs compliant v ce ------------------------------------------------------ 650 v i c (t c = 100 c ) ----------------------------------------- 30 a short circuit withstand time -------------------------- 10 s v ce(sat) ----------------------------------------------- 1.9 v typ. t f (t = 1 75 c ) ------------------------------------ 60 ns typ. v f ---------------------------------------------------- 1.8 v typ. applications welding converters uninterruptible power supplies (ups) pfc circuit inverter circuit bridge circuit xgf65a3h series products kgf65a3h mgf65a3h FGF65A3H package to247- 3l to3p- 3l to3pf- 3l package (not to scale) to 247- 3l to3p- 3l to 3p f- 3l absolute maximum ratings ? unless otherwise specified, t a = 25 c parameter symbol test conditions rating unit notes collector to emitter voltage v ce 650 v gate to emitter voltage v ge 30 v continuous collector current (1) i c t c = 25 c 50 a t c = 100 c 30 a pulsed collector current i c(pulse) pw 1m s duty cycle 1 % 90 a diode continuous forward current (1) i f t c = 25 c 40 (2) a t c = 100 c 30 a diode pulsed forward current i f(pulse) pw 1m s duty cycle 1 % 90 a short circuit withstand time t sc v ge = 15 v, v ce = 400 v 10 s power dissipation p d t c = 25 c 217 w mgf65a3h kgf65a3h 72 FGF65A3H operating junction temperature t j 1 75 c storage temperature range t stg ? 55 to 150 c (1) i c and i f are limited by maximum junction temperature of to3p-3l package. (2) limited by bond wire. (1) (2) (3) g c e (1) (2) (3) g c e (4) c (4) c (1) (2) (3) g c e equivalent circuit c (2 )( 4) e (3) g (1) http://www.sanken-ele.co.jp/en downloaded from: http:///
kgf65a3h, mgf65a3h, FGF65A3H xgf65a3h- ds rev. 1. 2 sanken electric co.,ltd. 2 jun. 03, 2 01 6 thermal characteristics ? unless otherwise specified, t a = 25 c parameter symbol test conditions m in . t yp . m ax . unit notes thermal resistance of igbt ( junction to case) r jc (igbt) ? ? 0.69 c/w mgf65a3h kgf65a3h ? ? 2.08 FGF65A3H thermal resistance of diode ( junction to case) r j c (di) ? ? 1.15 c/w mgf65a3h kgf65a3h 2.28 FGF65A3H electrical characteristics ? unless otherwise specified, t a = 25 c parameter symbol test conditions m in . t yp . m ax . unit collector to emitter breakdown voltage v (br) ce s i c = 100 a, v ge = 0 v 65 0 ? ? v collector to emitter leakage current i ce s v ce = 65 0 v, v ge = 0 v ? ? 100 a gate to emitter leakage current i ges v ge = 30 v ? ? 5 00 na gate threshold voltage v ge( th ) v ce = 10 v , i c = 1 ma 4.0 5.5 7.0 v collector to emitter saturation voltage v ce ( sat ) v ge = 15 v , i c = 30 a ? 1.9 2.4 v input capacitance c ies v ce = 20 v v g e = 0 v f = 1.0 mhz ? 1800 ? pf output capacitance c oes ? 200 ? reverse transfer capacitance c res ? 80 ? gate charge q g v c e = 52 0 v, i c = 30 a v ge = 15 v ? 60 ? nc turn-on delay time t d(on) t j = 25 c refer to figure 1 ? 30 ? ns rise time t r ? 30 ? turn-off delay time t d(off) ? 90 ? fall time t f ? 30 ? turn-on energy* e on ? 0.5 ? mj turn-off energy e off ? 0. 4 ? turn-on delay time t d(on) t j = 175 c refer to figure 1 ? 30 ? ns rise time t r ? 30 ? turn-off delay time t d(off) ? 12 0 ? fall time t f ? 60 ? turn-on energy* e on ? 1.0 ? mj turn-off energy e off ? 0. 7 ? emitter to collector diode forward voltage v f i f = 30 a ? 1.8 ? v emitter to collector diode reverse recovery time t rr i f = 30 a di/dt = 700 a/ s ? 50 ? ns *energy losses include the reverse recovery of diode. downloaded from: http:///
kgf65a3h, mgf65a3h, FGF65A3H xgf65a3h- ds rev. 1. 2 sanken electric co.,ltd. 3 jun. 03, 2 01 6 test circuits and waveforms 15v r g i c l v ce v ge dut (diode) dut (igbt) (a) test circuit v ge v ce i c 10% 90% 90% 10% t d(on) t r t d(off) t f dv/dt 90% 10% tt t (b) waveform figure 1 . test circuits and waveforms of dv/dt and switching time test conditions v ce = 400 v i c = 3 0 a v ge = 15 v r g = 10 l= 100 h downloaded from: http:///
kgf65a3h, mgf65a3h, FGF65A3H xgf65a3h- ds rev. 1. 2 sanken electric co.,ltd. 4 jun. 03, 2 01 6 typical characteristic curves figure 2 . reverse bias safe operating area figure 3 . safe operating area figure 4 . power dissipation vs. to3p and to247 case temperature figure 5 . collector current vs. to3p and to247 case temperature figure 6 . power dissipation vs. to3pf case temperature figure 7 . collector current vs. to3pf case temperature 0.1 1 10 100 1000 1 10 100 1000 collector current, i c (a) collector-emitter voltage, v ce (v) igbt single pulse t j = 175 c 0.1 1 10 100 1000 1 10 100 1000 collector current, i c (a) collector-emitter voltage, v ce (v) igbt single pulse t j = 25 c 100 s 10 s 0 50 100 150 200 250 300 25 50 75 100 125 150 175 power dissipation, p d (w) case temperature, t c ( c) to3p-3l, to247- 3l t j < 175 c 0 20 40 60 80 100 25 50 75 100 125 150 175 collector current, i c (a) case temperature, t c ( c) to3p-3l, to247- 3l t j < 175 c 0 20 40 60 80 100 25 50 75 100 125 150 175 power dissipation, p d (w) case temperature, t c ( c) to3pf- 3l t j < 175 c 0 10 20 30 40 25 50 75 100 125 150 175 collector current, i c (a) case temperature, t c ( c) to3pf- 3l t j < 175 c downloaded from: http:///
kgf65a3h, mgf65a3h, FGF65A3H xgf65a3h- ds rev. 1. 2 sanken electric co.,ltd. 5 jun. 03, 2 01 6 figure 8 . output characteristics (t j = 25 c ) figure 9 . output characteristics (t j = 17 5 c ) figure 10 . transfer characteristics figure 11 . saturation voltage vs. junction temperature figure 12 . gate threshold voltage vs. junction temperature figure 13 . capacitance characteristics 0 10 20 30 40 50 60 70 80 90 0 1 2 3 4 5 collector current, i c (a) collector-emitter voltage, v ce (v) t j = 25 c v ge = 15 v v ge = 20 v v ge = 10 v v ge = 8 v v ge = 12 v 0 10 20 30 40 50 60 70 80 90 0 1 2 3 4 5 collector current, i c (a) collector-emitter voltage, v ce (v) t j = 175 c v ge = 15 v v ge = 20 v v ge = 10 v v ge = 8 v v ge = 12 v 0 10 20 30 40 50 60 70 80 90 0 5 10 15 collector current. i c (a) gate-emitter voltage, v ge (v) v ce = 5 v t j = 25 c t j = 175 c 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175 collector-emitter saturation, v ce (sat) (v) junction temperature, t j ( c) v ge = 15 v i c = 60 a i c = 30 a i c = 10 a 3 4 5 6 7 0 25 50 75 100 125 150 gate threshold voltage (v) junction temperature, t j ( c) v ce = 10 v i c = 1ma 10 100 1000 10000 0 10 20 30 40 50 capacitance (pf) collector-emitter voltage, v ce (v) coes cies cres f = 1 mhz v ge = 0 v downloaded from: http:///
kgf65a3h, mgf65a3h, FGF65A3H xgf65a3h- ds rev. 1. 2 sanken electric co.,ltd. 6 jun. 03, 2 01 6 figure 14 . typical gate charge figure 15 . switching time vs. junction temperature figure 16 . switching time vs. collector current figure 17 . switching time vs. gate resistor figure 18 . switching loss vs. junction temperature figure 19 . switching loss vs. collector current 0 10 20 0 20 40 60 gate -emitter voltage, v ge (v) gate charge, qg (nc) v ce 130 v i c = 30 a v ce 520 v 10 100 1000 25 50 75 100 125 150 175 switching time (ns) junction temperature, t j ( c) t d(on) t f t d(off) t r inductive load i c = 30 a, v ce = 400 v, v ge = 15 v, rg = 10 1 10 100 1000 1 10 100 switching time (ns) collector current, i c (a) inductive load v ce = 400 v, v ge = 15 v, rg = 10 , t j = 175 c t d(off) t d(on) t r t f 10 100 1000 10 100 switching time (ns) gate resistor, r g () t f t d(off) t d(on) t r inductive load i c = 30 a, v ce = 400 v, v ge = 15 v, t j = 175 c 0 1 2 3 4 25 50 75 100 125 150 175 switching loss (mj) junction temperature, t j ( c) eon eoff inductive load i c = 30 a, v ce = 400 v, v ge = 15 v, rg = 10 eon + eoff 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 90 switching loss (mj) collector current, i c (a) eon eoff inductive load v ce = 400 v, v ge = 15 v, rg = 10 , t j = 175 c eon + eoff downloaded from: http:///
kgf65a3h, mgf65a3h, FGF65A3H xgf65a3h- ds rev. 1. 2 sanken electric co.,ltd. 7 jun. 03, 2 01 6 figure 20 . switching loss vs. gate resistor figure 21 . switching loss vs. collector-emitter voltage figure 22 . diode forward characteristics figure 23 . diode forward voltage vs. junction temperature figure 24 . diode reverse recovery time vs. di/dt figure 25 . diode reverse recovery charge vs. di/dt 0 1 2 3 4 10 20 30 40 50 60 70 80 90 100 switching loss (mj) gate resistor, r g () eon + eoff eoff eon inductive load i c = 30 a, v ce = 400 v, v ge = 15 v, t j = 175 c 0 1 2 3 4 200 250 300 350 400 450 500 switching loss (mj) collector-emitter voltage, v ce (v) eon eoff inductive load i c = 30 a, v ge = 15 v, rg = 10 , t j = 175 c eon + eoff 0 10 20 30 40 50 60 70 80 90 0.0 0.5 1.0 1.5 2.0 2.5 3.0 forward current, i f (a) forward voltage, v f (v) t j = 175 c t j = 25 c 0 1 2 3 0 25 50 75 100 125 150 175 forward voltage, v f (v) junction temperature, t j ( c ) i f = 10a i f = 30a i f = 60a 40 60 80 100 120 140 160 300 400 500 600 700 800 900 1000 reverse recovery time, trr (ns) di/dt (a/ s) t j = 175 c inductive load v r = 400 v i f = 30 a t j = 25 c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 300 400 500 600 700 800 900 1000 reverse recovery charge, qrr ( c) di/dt (a/ s) t j = 175 c inductive load v r = 400 v i f = 30 a t j = 25 c downloaded from: http:///
kgf65a3h, mgf65a3h, FGF65A3H xgf65a3h- ds rev. 1. 2 sanken electric co.,ltd. 8 jun. 03, 2 01 6 figure 26 . diode reverse recovery current vs. di/dt figure 27 . transient thermal resistance (to3p- 3l and to247- 3l ) figure 28 . transient thermal resistance (to3pf- 3l ) 0 5 10 15 20 25 30 300 400 500 600 700 800 900 1000 reverse recovery current, irr (a) di/dt (a/ s) t j = 175 c inductive load v r = 400 v i f = 30 a t j = 25 c 0.001 0.01 0.1 1 10 thermal resistance ( c/w) pulse width (s) to3p-3l to247- 3l t c = 25 c single pulse v ce < 5 v diode igbt 0.001 0.01 0.1 1 10 thermal resistance ( c/w) pulse width (s) to3pf- 3l t c = 25 c single pulse v ce < 5 v diode igbt 1 10 100 1m 10m 100m 1 10 100 1 10 100 1m 10m 100m 1 10 100 downloaded from: http:///
kgf65a3h, mgf65a3h, FGF65A3H xgf65a3h- ds rev. 1. 2 sanken electric co.,ltd. 9 jun. 03, 2 01 6 package outline d im ensions is in millimeters . pin treatment pb-free. device composition compliant with the rohs directive. to 2 47 -3l to 3p - 3l downloaded from: http:///
kgf65a3h, mgf65a3h, FGF65A3H xgf65a3h- ds rev. 1. 2 sanken electric co.,ltd. 10 jun. 03, 2 01 6 to 3pf- 3l marking diagram (a) part number ymdd ab FGF65A3H (b) lot number y is the last digit of the year (0 to 9) m is the month (1 to 9, o, n or d) dd is the date (two digit of 01 to 31) a and b are sanken control number mgf65a3h kgf65a3h ymdd ab ymdd ab to3pf-3l to3p-3l to247-3l (a) (b) (a) (b) (a) (b) downloaded from: http:///
kgf65a3h, mgf65a3h, FGF65A3H xgf65a3h- ds rev. 1. 2 sanken electric co.,ltd. 11 jun. 03, 2 01 6 important notes all data, illustrations, graphs, tables and a ny other information included in this document as to sanken s products listed herein (the sanken products) are current as of the date this document is issued. all contents in this doc ument are subject to any change without notice due to improvement of the sanken products, e tc. please make sure to confirm with a sanken sales representative that the contents set forth in this document reflect the latest revisions before use. the sanken products are intended for use as components of genera l purpose electronic equipment or apparatus (such as home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). prior to use of the sanken products, please put your signature, or affix your name and seal, on the specification documents of the sanken products and return the m to sanken. when considering use of the sanken products for any applications that require high er reliability (such as transportation equipment and its control systems, traffic signal control systems or equipment , disaster/crime alarm systems, various safety devices, etc.), you must contact a sanken sales representative to discuss the suitability of such use and put your signature, or affix your name and seal, on the specification documents of the sank en products and return th em to sanken, prior to the use of the sanken products. the sanken products are not intended for use in any applications that require extremely high reliability such as: aerospace equipment; nuclear power control systems; and medical equip ment or systems, whose failure or malfunction may result in death or serious injury to people, i.e., medical devices in class iii or a higher class as defined by relevant laws of japan (collectively, the specific applications). sanken assumes no li ability or responsibilit y whatsoever for any and all damages and losses that may be suffered by you, users or any third party, resulting from the use of the sanken products in the specific applications or in manner not in compliance with the instructions se t forth herein. in the event of using the sanken products by either (i) combining other prod ucts or materials therewith or (ii) physically, chemically or otherwise processing or treating the same , you must duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. although sanken is making efforts to enhance the quality a nd reliability of its products, it is impossible to completely avoid th e occurrence of any failure or defect in semiconductor products at a certain rate. you must take, at your own responsibility , preventative measures including using a sufficient safety design and con firming safety of any equipment or systems in/for which the sanken products are used, upon due consideration of a fa ilure occurrence rate or derating, etc., in order not to cause any hum an injury or death, fire accident or social harm which may result from any f ailure or malfunction of the sanken products. please refer to the relevant specification documents and sanken s official website in relation to derating. no anti-radioactive ray design ha s been adopted for the sanken products. no contents in this document can be transcribed or copied without sankens prior written consent. the circuit constant, operation examples, circuit examples, pattern la yout examples, design examples, recommended examples, all information and evaluation results based thereon, etc., described i n this document are presented for the sole purpose of reference of use of the sanken products and sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, or any possible infringeme nt of any and all property rights including intellectual property rights and any other rights of you, users or any third party, resulting from the foregoing. all technical information described in this document (the technical info rmation) is presented for the sole purpose of reference of use of the sanken products and no license, express, implied or otherwise, is granted hereby under any intellectual property rights or any other rights of sanken. unless otherwise agreed in writing between sanken and you, sank en makes no warranty of any kind, whether express or implied, including, without limitation, any warranty (i) as to the quality or performance of the sanken products (such as implied warranty of merchantability, or implied warranty of fitness for a particular pu rpose or special environment), (ii) that any sanken product is delivered free of claims of third parties by way of infringement or the like, (iii) that may arise from course of performance, course of dealing or usage of trade, and (iv) as to any information contain ed in this document (including its accuracy, usefulness, or reliability). in the event of using the sanken products, you must use the sam e after carefully examining all applicable environmental laws and regulations that regulate the inclusion or use of any particular controlled substances, including, but not limited to, the eu rohs directive, so as to be in strict compliance with such applicable laws and regulations. you must not use the sanken products or the technical informatio n for the purpose of any military applications or use, includ ing but not limited to the development of weapons of mass destruction. in the event of exporting the sanken products or the technica l information, or providing them for non-residents, you must comply with all applicable export control laws and regulations in each country including the u.s. export administration regulations (ear) and the fo reign exchange and foreign trade act of japan , and follow the procedures required by such applicable laws and regulations. sanken assumes no responsibility for any troubles, which may occur during the transportation of the sanken products including the falling thereof, out of sankens distribution network. although sanken has prepared this document with its due care to pursue the accuracy thereof, sanken does not warrant that it is error free and sanken assumes no liability whatsoever for any an d all damages and losses which may be suffered by you resultin g from any possible errors or omissions in connection with the contents included herein. please refer to the relevant specification documents in relation to particu lar precautions when using the sanken products, and refer to our official website in relation to general instructions and directions for using the sanken products. dsgn-cez-16001 downloaded from: http:///

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